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MRF9002NR2 1 rf device data freescale semiconductor rf power field effect transistor array n - channel enhancement - mode lateral mosfet designed for broadband commercial and industrial applications with frequen- cies to 1000 mhz. the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. the device is in a pfp - 16 power flat pack package which gives excellent thermal perfo rmances through a solderable backside contact. ? typical performance at 960 mhz, 26 volts output power ? 2 watts per transistor power gain ? 18 db efficiency ? 50% ? capable of handling 10:1 vswr, @ 26 vdc, 960 mhz, 2 watts cw output power features ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? rohs compliant ? in tape and reel. r2 suffix = 1,500 units per 16 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, + 15 vdc total dissipation per transistor @ t c = 25 c p d 4 w storage temperature range t stg - 65 to +150 c operating junction temperature t j 150 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case, single transistor r jc 12 c/w table 3. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: MRF9002NR2 rev. 8, 5/2006 freescale semiconductor technical data MRF9002NR2 1000 mhz, 2 w, 26 v lateral n - channel broadband rf power mosfet case 978 - 03 plastic pfp - 16 figure 1. pin connections 16 15 14 13 12 11 10 1 2 3 4 5 6 7 8 (top view) 9 n.c. gate1 n.c. gate2 n.c. gate3 n.c. drain 1?1 drain 1?2 drain 2?1 drain 2?2 n.c. drain 3?1 drain 3?2 n.c. n.c. note: exposed backside flag is source terminal for transistors. 16 1 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor MRF9002NR2 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit on characteristics gate threshold voltage (v ds = 10 vdc, i d = 20 adc) v gs(th) 2.4 ? 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 25 madc) v gs(q) 3 ? 5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 0.1 adc) v ds(on) ? 0.3 ? vdc functional tests (per transistor in freescale test fixture, 50 ohm system) common - source amplifier power gain @ p1db (v dd = 26 vdc, i dq = 25 ma, f = 960.0 mhz) g ps 15 18 ? db drain efficiency @ p1db (v dd = 26 vdc, i dq = 25 ma, f = 960.0 mhz) 35 50 ? % input return loss @ p1db (v dd = 26 vdc, i dq = 25 ma, f = 960.0 mhz) irl ? -15 -9 db power output, 1 db compression point (v dd = 26 vdc, i dq = 25 ma, f = 960.0 mhz) p 1db 34 37 ? dbm
MRF9002NR2 3 rf device data freescale semiconductor figure 2. MRF9002NR2 broadband test circuit schematic rf1 output z1 z2 v gs1 c3 c2 dut v ds1 z3 r1 z4 z5 c8 c4 c5 c1 l1 l4 c6 c7 c16 c14 rf1 input rf2 output rf3 output rf2 input rf3 input v gs2 v ds2 v gs3 v ds3 l2 l5 l3 l6 r2 r3 z6 z7 z8 z9 z10 c10 c9 c18 c13 z11 z12 z13 z14 z15 c12 c11 c17 c15 + + + + + + table 5. MRF9002NR2 broadband test circuit component designations and values designators description c1 - c6 33 pf chip capacitors (0805) c7 - c12 1.0 f, 35 v tantalum capacitors, b case, kemet c13 8.2 pf chip capacitor (0805) c14, c15 10 pf chip capacitors (0805) c16, c17 2.7 pf chip capacitors (0805) c18 3.3 pf chip capacitor (0805) l1 - l6 12 nh chip inductors (0805) r1 - r3 0 chip resistors (0805) z1, z11 1.16 x 28.5 mm microstrip z2, z7, z12 0.65 x 5.6 mm microstrip z3, z8, z13 0.65 x 2.6 mm microstrip z4, z14 1.16 x 19.5 mm microstrip z5, z15 1.16 x 17.5 mm microstrip z6 1.16 x 12.9 mm microstrip z9 1.16 x 27.2 mm microstrip z10 1.16 x 4.3 mm microstrip pcb etched circuit board raw pcb material rogers ro4350, 0.020 , 2.5 , x 2.5 , r = 3.5 bedstead copper heatsink
4 rf device data freescale semiconductor MRF9002NR2 figure 3. MRF9002NR2 broadband test circuit component layout pin 1 mrf9002 960 mhz rf1 input rev. b rf1 output rf2 input rf2 output v gs1 v gs2 v ds1 v ds2 c1 c2 c8 c16 c7 c9 l4 c10 l5 c14 l1 l2 c3 r1 r2 c13 r3 c4 c18 l3 c15 l6 c11 c17 c12 c5 c6 rf3 input rf3 output v gs3 v ds3 freescale has begun the transition of marking printed circuit boards (pcb s) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
MRF9002NR2 5 rf device data freescale semiconductor typical characteristics 16 15 35 0 17 g ps p out v ds = 26 vdc i dq = 25 ma f = 960 mhz single?tone g ps , power gain (db) 33 19.25 31 19 29 18.75 27 18.5 25 18.25 23 18 21 17.75 19 17.5 17 17.25 19.5 2 4 6 8 10 12 14 985 25 41 925 10 dbm v ds = 26 vdc i dq = 25 ma single?tone p out , output power (dbm) 39 37 35 33 31 29 27 975 965 955 945 935 15 dbm p in = 20 dbm p in , input power (dbm) figure 4. output power and power gain versus input power p out , output power (dbm) p out , output power (dbm) figure 5. power gain versus output power g ps , power gain (db) 30 19.9 20.3 22 ?32 ?28 g ps imd p out = 2 w (pep) i dq = 25 ma f1 = 960.0 mhz, f2 = 960.1 mhz v ds , drain source supply (volts) figure 6. power gain and intermodulation distortion versus supply voltage g ps , power gain (db) 20.2 ?29 20.1 ?30 20 ?31 29 28 27 26 25 24 23 intermodulation distortion (dbc) imd, 40 ?65 ?20 5 25 ma v ds = 26 vdc f1 = 960.0 mhz, f2 = 960.1 mhz p out , output power (dbm) pep figure 7. intermodulation distortion versus output power intermodulation distortion (dbc) imd, 50 ma 75 ma 100 ma ?25 ?30 ?35 ?40 ?45 ?50 ?55 ?60 35 30 25 20 15 10 40 ?70 0 10 3rd order v ds = 26 vdc f1 = 960.0 mhz, f2 = 960.1 mhz p out , output power (dbm) figure 8. intermodulation distortion products versus output power intermodulation distortion (dbc) imd, ?10 ?20 ?30 ?40 ?50 ?60 35 30 25 20 15 5th order 7th order f, frequency (mhz) figure 9. output power versus frequency 40 15 23 10 100 ma v ds = 26 vdc f = 960 mhz single?tone 22 21 20 19 18 17 16 15 20 25 30 35 25 ma 75 ma 50 ma
6 rf device data freescale semiconductor MRF9002NR2 typical characteristics c rss c iss 30 2 12 22 v ds , drain source supply (volts) figure 10. capacitance versus drain source voltage c oss 23 24 25 26 27 28 29 3 4 5 6 7 8 9 10 11 c, capacitance (pf) 210 10 9 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 8 10 6 mttf factor (hours x amps 2 ) 90 110 130 150 170 190 figure 11. mttf factor versus junction temperature 100 120 140 160 180 200 10 7
MRF9002NR2 7 rf device data freescale semiconductor figure 12. series equivalent source and load impedance f mhz z source z load 925 960 985 4.5 + j13.3 4.1 + j15.8 4.3 + j15.3 23.4 + j9.2 23.2 + j10.4 23.0 + j11.1 v dd = 26 v, i dq = 25 ma, p out = 2 w pep f = 925 mhz z o = 50 f = 925 mhz 985 mhz 985 mhz f mhz z source z load 925 960 985 6.0 + j12.3 5.8 + j16.5 5.9 + j14.3 19.7 + j27.8 22.0 + j23.9 22.5 + j25.4 v dd = 26 v, i dq = 25 ma, p out = 2 w pep f mhz z source z load 925 960 985 4.3 + j12.2 3.9 + j15.9 4.3 + j14.0 23.1 + j6.5 22.8 + j8.4 22.6 + j9.3 v dd = 26 v, i dq = 25 ma, p out = 2 w pep transistor 2 transistor 3 transistor 1 z source z load f = 925 mhz z o = 50 f = 925 mhz 985 mhz 985 mhz f = 925 mhz 985 mhz z source t 1 t 2 t 1 f = 925 mhz 985 mhz z load t 2 t 3 t 3 transistors 1 and 2 transistor 3 z source z load input matching network device under test output matching network z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z load z source
8 rf device data freescale semiconductor MRF9002NR2 notes
MRF9002NR2 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor MRF9002NR2 notes
MRF9002NR2 11 rf device data freescale semiconductor package dimensions case 978 - 03 issue c dim min max millimeters a 2.000 2.300 a1 0.025 0.100 a2 1.950 2.100 d 6.950 7.100 d1 4.372 5.180 e 8.850 9.150 e1 6.950 7.100 e2 4.372 5.180 l 0.466 0.720 l1 0.250 bsc b 0.300 0.432 b1 0.300 0.375 c 0.180 0.279 c1 0.180 0.230 e 0.800 bsc h ??? 0.600 0 7 aaa 0.200 bbb 0.200 ccc 0.100 notes: 1. controlling dimension: millimeter. 2. dimensions and tolerances per asme y14.5m, 1994. 3. datum plane ?h? is located at bottom of lead and is coincident with the lead where the lead exits the plastic body at the bottom of the parting line. 4. dimensions d and e1 do not include mold protrusion. allowable protrusion is 0.250 per side. dimensions d and e1 do include mold mismatch and are determined at datum plane ?h?. 5. dimension b does not include dambar protrusion. allowable dambar protrusion is 0.127 total in excess of the b dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. bottom view d1 e2 16 9 8 1 e/2 s b m bbb c d x 45 h e 14 x e1 8x e a2 a seating plane datum plane gauge l1 plane 1.000 l w w 0.039 a1 ccc c detail y sect w - w c c1 b1 b ??? ??? s a m aaa c a b h c y pfp - 16 plastic
12 rf device data freescale semiconductor MRF9002NR2 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF9002NR2 rev. 8, 5/2006 rohs - compliant and/or pb - free versions of freescale products have the functionality and electrical characteristics of their non - rohs - compliant and/or non - pb - free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products program, go to http://www.freescale.com/epp.

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